MXD1210

V_CCI to GND .....................................................................-0.3V, +7V
VBATT1 to GND................................................................. -0.3V, +7V
VBATT2 to GND................................................................. -0.3V, +7V
VCCO to GND.......................................................... -0.3V, VS + 0.3V
(VS = greater of V_CCI, VBATT1, VBATT2)
Digital Input and Output Voltages to GND............ 0.3V, V_CCI + 0.3V
Continuous Power Dissipation (T_A = +70)
8-Pin Plastic DIP (derate 9.09mW/ above +70) ..............727mW
8-Pin SO (derate 5.88mW/ above +70)...........................471mW
16-Pin Wide SO (derate 9.52mW/ above +70)................762mW
8-Pin CERDIP (derate 8.00mW/ above +70)...................640mW
Operating Temperature Ranges
MXD1210C_ _ .............................................................. 0 to +70
MXD1210E_ _ ........................................................... -40 to +85
MXD1210MJA........................................................... -55 to +125
Storage Temperature Range .................................. -65 to +150
Lead Temperature (soldering, 10sec) .................................. +300
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The MXD1210 nonvolatile RAM controller is a very lowpower CMOS circuit that converts standard (volatile) CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protection when power to the RAM is in a marginal (out-oftolerance) condition. When the power supply begins to fail, the RAM is write protected, and the device switches to battery-backup mode.