Position: Home  > All Categories> Integrated Circuits (ICs) > MX0912B351Y

MX0912B351Y

Features: · Interdigitated structure; high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of dissipated...

product image

MX0912B351Y Picture
See larger image
SeekIC No. : 004431507 Detail

MX0912B351Y: Features: · Interdigitated structure; high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes ver...

MX0912B351Y Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MX0912B351Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Interdigitated structure; high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input and output matching cell allows an easier design of circuits.


Application

Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 65 V
VCES collector-emitter voltage RBE = 0 - 60 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 3 V
IC collector current tp 10 ms; d 10% - 21 A
Ptot total power dissipation
(peak power)		 Tmb = 75 ; tp 10 ms; 10% - 960 W
Tstg storage temperature   -65 +200
Tj operating junction temperature   - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. MX0912B351Y is mounted in common base configuration and specified in class C.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Filters
PICO2205A
PICO2204A
Test Equipment
TOP853
TOP2005
Undefined Category
VI-B63-IU
X27 589
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Switches
US32DMRJ
HBGQ22P-11ET
Isolators
HCPL062N
HCPL316J
View more