Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry improves power sharing a...
MX0912B100Y: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization real...
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Features: · Interdigitated structure; high emitter efficiency· Diffused emitter ballasting resisto...
· Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 65 | V |
VCES | collector-emitter voltage | RBE = 0 | - | 60 | V |
VCEO | collector-emitter voltage | open base | - | 20 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | collector current(DC) | tp 10 ms; 10% | - | 6 | A |
Ptot | total power dissipation (peak power) |
tp 10 ms; 10%;Tmb = 75 | - | 290 | W |
Tstg | storage temperature | -65 | +200 | ||
Tj | operating junction temperature | - | 200 | ||
Tsld | soldering temperature | up to 0.2 mm from ceramic; t 10 s |
- | 235 |
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs.
The MX0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.