Transistors Bipolar (BJT) BULKTR TNS-MICL
MX0912B251Y,114: Transistors Bipolar (BJT) BULKTR TNS-MICL
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Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting...
Features: · Interdigitated structure; high emitter efficiency· Diffused emitter ballasting resisto...
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 20 V | ||
Emitter- Base Voltage VEBO : | 3 V | Maximum DC Collector Current : | 15 A | ||
Configuration : | Single | Maximum Operating Frequency : | 1215 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-439A | Packaging : | Tray |