MTW33N10E

Features:

• Avalanche Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	100	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	100	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	33 20 99	Adc Apk
Total Power Dissipation @ Tc= 25°C Derate above 25°C	PD	125 1.0	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 10Vdc, Vdc,Peak IL =33 Apk, L =1.000 mH, RG = 25)	EAS	545	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	1.0 40	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
E-FET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

This MTW33N10E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these MTW33N10E are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.