MTW32N20E

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-247
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 75 mOhms


Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Isolated Mounting Hole


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	200	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	200	Vdc
GatetoSource Voltage - Continuous	VGS	± 20	Vdc
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	32 19 128	Adc Apk
Total Power Dissipation Derate above 25°C	PD	180 1.44	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =50Vdc,VGS = 10Vdc, Vdc,Peak IL =32Apk, L =1.58mH, RG = 25)	EAS	810	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	0.7 40	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Sil Pad is a trademark of the Bergquist Company


Description

This MTW32N20E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these MTW32N20E are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Parameters:

Technical/Catalog Information	MTW32N20E
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	75 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	5000pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTW32N20E MTW32N20E MTW32N20EOS ND MTW32N20EOSND MTW32N20EOS