MTP8N50E

Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	500	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	500	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	±20 ±40	Vdc VPK
Drain Current - Continuous @ TC = 25°C - Continuous@ TC =100°C - Single Pulse (tp 10 s)	ID ID IDM	8.0 5.0 32	Adc Apk
Total Power Dissipation Derate above 25°C	PD	125 1.0	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =80Apk, L = 16mH, RG = 25)	EAS	510	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	1.0 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

The MTP8N50E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTP8N50E also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, the MTP8N50E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.