MTP8N06

Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	60	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	60	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	± 20 ± 30	Vdc VPK
Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s)	ID ID IDM	8.0 6.4 24	Adc Apk
Total Power Dissipation Derate above 25°C	PD	40 0.32	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =80Apk, L = 3.0mH, RG = 25)	EAS	96	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	3.13 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

The MTP8N06 is designed to withstand high energy in the avalanche and commutation modes. The MTP8N06 also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP8N06 is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.