Position: Home  > All Categories> Integrated Circuits (ICs) > MTP8N06E

MTP8N06E

Specifications Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc GateSource Voltage- Continuous- NonRepetitive (tp10ms) VGSVGSM ±20±30 VdcVpk Drain - Continuous - Continuous - Single Pulse(t...

product image

MTP8N06E Picture
See larger image
SeekIC No. : 004430864 Detail

MTP8N06E: Specifications Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc GateSource Voltage- Continuous- NonRepe...

MTP8N06E Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MTP8N06E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms)

VGS
VGSM

±20
±30


Vdc
Vpk

Drain - Continuous
- Continuous
- Single Pulse(tp10 s)
ID
ID
IDM
8.0
6.4
24

Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
40
0.32
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25V, VGS = 10 Vdc,
IL = 8.0 A, L = 3.0mH, RG = 25)
EAS
96
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
3.13
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
°C



Description

The MTP8N06E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP8N06E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. MTP8N06E specifications:
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Kits
IT243
UVSC-110-4E1
Isolators
HCPL062N
HCPL316J
Transformers
TM-09210
BV222-1-00992
Discrete Semiconductor Products
T508N12TOF
MUR20040
Resistors
A101G
3006P-1-205LF
View more