MTP75N06HD

Features:

• Ultra Low R_DS(on), HighCell Density, HDTMOS
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Avalanche Energy Specified


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	60	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	60	Vdc
GatetoSource Voltage - Continuous - Single Pulse	VGS VGSM	± 20 ± 30	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	75 50 225	Adc Apk
Total Power Dissipation Derate above 25°C	PD	150 1.0	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =75Apk, L = 0.177mH, RG = 25)	EAS	500	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	1.0 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET, Designer's and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.


Description

The MTP75N06HD is designed to withstand high energy in the avalanche and commutation modes. The MTP75N06HD also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.