MTP75N05HD

Features: • Ultra Low RDS(on), HighCell Density, HDTMOS• SPICE Parameters Available• Diode is Characterized for Use in Bridge Circuits• Diode Exhibits High Speed, Yet Soft Recovery• IDSS and VDS(on) Specified at Elevated Temperature• Avalanche Energy SpecifiedSp...

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SeekIC No. : 004430858 Detail

MTP75N05HD: Features: • Ultra Low RDS(on), HighCell Density, HDTMOS• SPICE Parameters Available• Diode is Characterized for Use in Bridge Circuits• Diode Exhibits High Speed, Yet Soft Re...

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Part Number:
MTP75N05HD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Ultra Low RDS(on), HighCell Density, HDTMOS
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, Yet Soft Recovery
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified



Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
50
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
50
Vdc
GatetoSource Voltage - Continuous
VGS
± 20
Vdc
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
75
65
225
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
150
1
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS = 10Vdc, PEAK IL =75Apk, L = 0.177mH, RG = 25)
EAS
500
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.00
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

Designer's, EFET and HDTMOS are trademarks of Motorola Inc.



Description

The MTP75N05HD is designed to withstand high energy in the avalanche and commutation modes. The MTP75N05HD also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.


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