MTP75N03HDL

Features:

• Ultra Low R_DS(on), HighCell Density, HDTMOS
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Avalanche Energy Specified


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	25	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	25	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	± 15 ± 20	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	75 59 225	Adc Apk
Total Power Dissipation Derate above 25°C	PD	150 1.0	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 5.0Vdc, Vdc,Peak IL =75Apk, L = 0.1mH, RG = 25)	EAS	1250	mJ
Thermal Resistance - Junction to Case - Junction to Ambient ,when mounted with the minimum recommended pad size	RJC RJA	1.0 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.

EFET and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.


Description

The MTP75N03HDL is designed to withstand high energy in the avalanche and commutation modes. The MTP75N03HDL also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.