MTDF1N03HD

Features:

• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided


Specifications

Negative sign for PChannel devices omitted for clarity

Rating		Symbol	Max	Unit
DraintoSource Voltage		VDSS	30	V
DraintoGate Voltage (RGS = 1.0 M)		VDGR	30	V
GatetoSource Voltage - Continuous		VGS	± 20	V
1 inch SQ. FR4 or G10 PCB Figure 1 below 1 die operating Steady State	Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1)	RTHJA PD ID  ID IDM	100 1.25 10 2.8 2.2 23	°C/W Watts mW/°C A A A
Minimum FR4 or G10 PCB Figure 2 below 1 die operating Steady State	Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1)	RTHJA PD ID ID IDM	200 0.63 5.0 2.0 1.6 16	°C/W Watts mW/°C A A A
Minimum FR4 or G10 PCB Figure 2 below 2 die operating Steady State	Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1)	RTHJA PD ID ID IDM	300 0.42 3.33 1.6 1.3 13	°C/W Watts mW/°C A A A
Operating and Storage Temperature Range		TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD =30 Vdc, VGS = 10 Vdc, Peak IL =2.4 Apk, L = 69 mH, RG = 25 )		EAS	200	mJ

(1) Repetitive rating; pulse width limited by maximum junction temperature.

Description

The MTDF1N03HD is an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. The MTDF1N03HD is designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.