MTDF1C02HD

Features:

• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided


Specifications

Negative sign for PChannel devices omitted for clarity

Rating		Symbol	Max	Unit
DraintoSource Voltage	NChannel PChannel	VDSS	20 20	V
DraintoGate Voltage (RGS = 1.0 M)	NChannel PChannel	VDGR	20 20	V
GatetoSource Voltage - Continuous	NChannel PChannel	VGS	±8.0 ±8.0	V
Operating and Storage Temperature Range		TJ and Tstg	55 to 150	°C

Description

MTDF1C02HD is an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MTDF1C02HD is designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. The MTDF1C02HD can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.