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MSARW80G20A

Features: • Oxide passivated structure for very low leakage currents• Epitaxial structure minimizes forward voltage drop• Hermetically sealed, low profile ceramic surface mount power package• Low package inductance• Very low thermal resistance• available with TX...

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SeekIC No. : 004427561 Detail

MSARW80G20A: Features: • Oxide passivated structure for very low leakage currents• Epitaxial structure minimizes forward voltage drop• Hermetically sealed, low profile ceramic surface mount pow...

MSARW80G20A Data Sheet

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Part Number:
MSARW80G20A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Oxide passivated structure for very low leakage currents
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• available with TXV (MSARW80G20AV) or S-level (MSARW80G20AS) screening i.a.w. Microsemi internal procedure PS11.50


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 200 Volts
Working Peak Reverse Voltage VRWM 200 Volts
DC Blocking Voltage VR 200 Volts
Average Rectified Forward Current, Tc 135°C IF(ave) 80 Amps
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 250
 Amps
Junction Temperature Range Tj -65 to +200 °C
Storage Temperature Range Tstg -65 to +200 °C
Thermal Resistance, Junction to Case JC 0.8
(typ.0.35)		 °C/W



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