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MSARS200S10LR

Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic surface mount power package· Low package inductance· Very low thermal resistance· Available as standard polarity (strap-to-anode, MSARS2...

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MSARS200S10LR: Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic surface mount power package· Low pac...

MSARS200S10LR Data Sheet

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Part Number:
MSARS200S10LR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· passivated mesa structure for very low leakage currents
· Epitaxial structure minimizes forward voltage drop
· Hermetically sealed, low profile ceramic surface mount power package
· Low package inductance
· Very low thermal resistance
· Available as standard polarity (strap-to-anode, MSARS200S10L) and reverse polarity (strap-to-cathode: MSARS200S10RL)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 100 Volts
Working Peak Reverse Voltage VRWM 100 Volts
DC Blocking Voltage VR 100 Volts
Average Rectified Forward Current, Tc 125 IF(ave) 200 Amps
derating, forward current, Tc 125 dIF/dT 4 Amps/
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 750 Amps
Junction Temperature Range Tj -55 to +200
Storage Temperature Range Tstg -55 to +200
Thermal Resistance, Junction to Case:
MSARS200S10L
MSARS200S10LR		 JC 0.20
0.35		 /W



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