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MSARS200S20LP

Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Low profile plastic surface mount package with CTE matched base· Low package inductance· Very low thermal resistance· Available as standard polarity (strap-to-anode, MSARS200S20...

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SeekIC No. : 004427555 Detail

MSARS200S20LP: Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Low profile plastic surface mount package with CTE matched base· Low package ...

MSARS200S20LP Data Sheet

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Part Number:
MSARS200S20LP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· passivated mesa structure for very low leakage currents
· Epitaxial structure minimizes forward voltage drop
· Low profile plastic surface mount package with CTE matched base
· Low package inductance
· Very low thermal resistance
· Available as standard polarity (strap-to-anode, MSARS200S20LP) and reverse polarity (strap-to-cathode: MSARS200S20LRP)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 200 Volts
Working Peak Reverse Voltage VRWM 200 Volts
DC Blocking Voltage VR 200 Volts
Average Rectified Forward Current, Tc 125 IF(ave) 200 Amps
derating, forward current, Tc 125 dIF/dT 4 Amps/
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 750 Amps
Junction Temperature Range Tj -55 to +125
Storage Temperature Range Tstg -55 to +125
Thermal Resistance, Junction to Case: JC 0.20 /W



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