Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic (MSARS50S20Y and MSARS50S20RY) or glass (MSARS50S20X and MSARS50S20RX) surface mount power package· Low package inductance· Very low the...
MSARS50S20Y: Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic (MSARS50S20Y and MSARS50S20RY) or gl...
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Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes...
Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes...
Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes...
DESCRIPTION | SYMBOL | MAX. | UNIT |
Peak Repetitive Reverse Voltage | VRRM | 200 | Volts |
Working Peak Reverse Voltage | VRWM | 200 | Volts |
DC Blocking Voltage | VR | 200 | Volts |
Average Rectified Forward Current, Tc 125°C | IF(ave) | 50 | Amps |
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave | IFSM | 375 |
Amps |
Junction Temperature Range | Tj | -65 to +200 | °C |
Storage Temperature Range | Tstg | -65 to +200 | °C |
Thermal Resistance, Junction to Case | JC | 1.0 | °C/W |