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MSARS50S20X

Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic (MSARS50S20Y and MSARS50S20RY) or glass (MSARS50S20X and MSARS50S20RX) surface mount power package· Low package inductance· Very low the...

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SeekIC No. : 004427559 Detail

MSARS50S20X: Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Hermetically sealed, low profile ceramic (MSARS50S20Y and MSARS50S20RY) or gl...

MSARS50S20X Data Sheet

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Part Number:
MSARS50S20X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· passivated mesa structure for very low leakage currents
· Epitaxial structure minimizes forward voltage drop
· Hermetically sealed, low profile ceramic (MSARS50S20Y and MSARS50S20RY) or glass (MSARS50S20X and MSARS50S20RX) surface mount power package
· Low package inductance
· Very low thermal resistance
· Available as standard polarity (strap-to-anode, MSARS50S20X, Y) and reverse polarity (strap-to-cathode: MSARS50S20RX, Y)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 200 Volts
Working Peak Reverse Voltage VRWM 200 Volts
DC Blocking Voltage VR 200 Volts
Average Rectified Forward Current, Tc 125°C IF(ave) 50 Amps
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 375
 Amps
Junction Temperature Range Tj -65 to +200 °C
Storage Temperature Range Tstg -65 to +200 °C
Thermal Resistance, Junction to Case JC 1.0 °C/W



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