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MSAGZ52F120A

Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· Reverse polarity available upon request: MSAH(G)Z52F120B· high frequency IGBT, low switching los...

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MSAGZ52F120A: Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistan...

MSAGZ52F120A Data Sheet

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Part Number:
MSAGZ52F120A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Rugged polysilicon gate cell structure
· high current handling capability, latch-proof
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request: MSAH(G)Z52F120B
· high frequency IGBT, low switching losses
· anti-parallel FREDiode (MSAHZ52F120A only)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C		 BVDSS 1200 Volts
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M BVDGR 1200 Volts
Continuous Gate-to-Source Voltage VGS +/-20 Volts
Transient Gate-to-Source Voltage VGSM +/-30 Volts
Continuous Drain Current Tj= 25°C
Tj=90°C		 IC25
IC90		 52
33		 Amps
Peak Collector Current (pulse width limited by Tjmax,) Tj= 25°C
Tj=90°C		 ICM(25)
ICM(90)		 104
66		 Amps
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200mH,
RG= 25W, Tj= 25°C		 EAS 65 mJ
Short circuit current (SOA) , VCE1200V, TJ= 150°C, tsc10ms IC(sc) 260 A
Short circuit (reverse) current (RBSOA) , VCE 1200V, TJ= 150°C IC(sc)RBSOA 66 A
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Continuous Source Current (Body Diode, MSAHZ52F120A only) IS 50 Amps
Pulse Source Current (Body Diode, MSAHZ52F120A only) ISM 100 Amps
Thermal Resistance, Junction to Case JC 0.4 °C/W



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