Features: · Low Forward Voltage Drop, Low Tail Current· Avalanche and Surge Rated· High Freq. Switching to 20KHz· Ultra Low Leakage Current· RBSOA and SCSOA Rated· Available with Lot Acceptance Testing Spec MSAGA11F120DL, -L SuffixSpecifications SYMBOL PARAMETER VALUE UNIT VCES Colle...
MSAGA11F120D: Features: · Low Forward Voltage Drop, Low Tail Current· Avalanche and Surge Rated· High Freq. Switching to 20KHz· Ultra Low Leakage Current· RBSOA and SCSOA Rated· Available with Lot Acceptance Test...
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Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof·...
Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof·...
Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof·...
SYMBOL | PARAMETER | VALUE | UNIT |
VCES | Collector-Emitter Voltage | 1200 | Volts |
VCGR | Collector-Gate Voltage (RGE = 20K) | 1200 | Volts |
VEG | Emitter-Collector Voltage | 15 | Volts |
VGE | Gate-Emitter Voltage | ±20 | Volts |
IC1 | Continuous Collector Current @ TC = 25 | 22 | Amps |
IC2 | Continuous Collector Current @ TC = 110 |
11 | Amps |
ICM | Surge Current (10s x 4ms double exponential, see figure 2) | 55 | Amps |
ICM1 | Pulsed Collector Current @ TC = 25 | 44 | Amps |
ICM2 | Pulsed Collector Current @ TC = 110 | 22 | Amps |
ICsurge2 | Surge Current: tp= 2 us (ton= 1.5 s; toff= 0.5 ms to 50% decay), 10 pulses, duty cycle= 1:2,500,000 (12 pulses/minute) |
400 | Amps |
EAS | Single Pulse Avalanche Energy | 10 | mJ |
PD | Total Power Dissipation | 125 | Watts |
TJ, TSTG | Operating and Storage: Junction Temperature Range | ±20 |
The features of MSAGA11F120D:
` N-Channel enhancement mode high density IGBT die
` Passivation: Polyimide, 20 um, over Silicon Nitride, .8um
` Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
` Collector/Gate Metallization: Ti Ni (1 um) Ag (0.2 um) for soft solder attach