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MSAGX75F60A

Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· Reverse polarity available upon request: MSAGX75F60B· high frequency IGBT, low switching lossesS...

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MSAGX75F60A: Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistan...

MSAGX75F60A Data Sheet

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Part Number:
MSAGX75F60A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Rugged polysilicon gate cell structure
· high current handling capability, latch-proof
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request: MSAGX75F60B
· high frequency IGBT, low switching losses


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ25°C		 BVCES 600 Volts
Collector-to-Gate Breakdown Voltage @ TJ25°C, RGS= 1 MW BVCGR 600 Volts
Continuous Gate-to-Emitter Voltage VGES +/-20 Volts
Transient Gate-to-Emitter Voltage VGEM +/-30 Amps
Continuous Collector Current Tj= 25°C
Tj= 90°C		 IC25
IC90		 75
50		 Amps/°C
Peak Collector Current, pulse width limited by Tjmax, ICM 200 Amps
Safe Operating Area (RBSOA) @ VGE= 15V, L= 30mH (clamped inductive
load), RG= 2.7W, Tj= 125°C, VCE= 0.8 x VCES		 Imax 100 Amps
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Thermal Resistance, Junction to Case JC PD °C/W



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