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MSAFX75N10A

Features: · Ultrafast body diode· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· Reverse polarity available upon requestSpecifications DESC...

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MSAFX75N10A: Features: · Ultrafast body diode· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically sealed, surface mount power package· Low package indu...

MSAFX75N10A Data Sheet

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Part Number:
MSAFX75N10A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Ultrafast body diode
· Rugged polysilicon gate cell structure
· Increased Unclamped Inductive Switching (UIS) capability
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C		 BVDSS 100 Volts
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M BVDGR 100 Volts
Continuous Gate-to-Source Voltage VGS +/-20 Volts
Transient Gate-to-Source Voltage VGSM +/-30 Volts
Continuous Drain Current Tj= 25°C
Tj=100°C		 ID25
ID100		 75
60		 Amps
Peak Drain Current, pulse width limited by TJmax IDM 300 Amps
Peak Drain Current IAR 75 Amps
Repetitive Avalanche Energy EAR 30 mJ
Single Pulse Avalanche Energy EAS tbd mJ
Voltage Rate of Change of the Recovery Diode
@ ISIDM, di/dt 100 A/s, VDD VDSS, TJ 150°C		 dv/dt 5.0 V/ns
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Continuous Source Current (Body Diode) IS 75 Amps
Pulse Source Current (Body Diode) ISM 300 Amps
Thermal Resistance, Junction to Case JC 0.25 °C/W



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