Features: • Ultrafast body diode• Increased Unclamped Inductive Switching (UIS) capability• Hermetically sealed, surface mount power package• Very low package inductance• Very low thermal resistance• Reverse polarity available upon requestApplication• DC-D...
MSAFA75N10C: Features: • Ultrafast body diode• Increased Unclamped Inductive Switching (UIS) capability• Hermetically sealed, surface mount power package• Very low package inductance̶...
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Features: · Low On-state resistance· Avalanche and Surge Rated· High Freq. Switching· Ultra Low Le...
Features: • Low On-State resistance• Avalanche and Surge Rated• High Frequency S...
Features: · Ultrafast rectifier in parallel with the body diode (MSAE type only)· Rugged polysilic...
Description | Symbol | Max. | Unit |
Drain-to-Source Voltage (Gate Shorted to Source) | VDSS | 100 | Volts |
Continuous Gate-to-Source Voltage | VGS | +/-30 | Volts |
Transient Gate-to-Source Voltage | VGSM | +/-40 | Volts |
Continuous Drain Current Tj= 25°C Tj= 100°C |
ID25 ID100 |
75 60 |
Amps |
Peak Drain Current, pulse width limited by TJmax | IDM | 300 | Amps |
Repetitive Avalanche Current | IAR | 75 | Amps |
Repetitive Avalanche Energy | EAR | 30 | mJ |
Single Pulse Avalanche Energy (3) | EAS | 1500 | mJ |
Total Power Dissipation @Tc=25°C | PD | 540 | Watts |
Junction Temperature Range | Tj | -55 to +150 | °C |
Storage Temperature Range | Tstg | -55 to+150 | °C |
Continuous Source Current (Body Diode) | IS | 75 | Amps |
Pulse Source Current (Body Diode) | ISM | 300 | Amps |
Thermal Resistance, Junction to Case | JC | 0.23 | °C/W |
New generation N-channel enhancement mode power MOSFET MSAFA75N10C with rugged polysilicon gate structure and fast switching intrinsic rectifier. The very rugged Coolpack2TM surface-mount package is lightweight, space saving and hermetically sealed for high reliability and/or military/space application.