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MSAFA1N100D

Features: · Low On-state resistance· Avalanche and Surge Rated· High Freq. Switching· Ultra Low Leakage Current· UIS rated· Available with Lot Acceptance Testing Spec MSAFA1N100DL, -L SuffixSpecifications SYMBOL PARAMETER VALUE UNIT VDSS Drain - Source Voltage 1000 Volts VGS Ga...

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SeekIC No. : 004427530 Detail

MSAFA1N100D: Features: · Low On-state resistance· Avalanche and Surge Rated· High Freq. Switching· Ultra Low Leakage Current· UIS rated· Available with Lot Acceptance Testing Spec MSAFA1N100DL, -L SuffixSpecif...

MSAFA1N100D Data Sheet

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Part Number:
MSAFA1N100D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Low On-state resistance
· Avalanche and Surge Rated
· High Freq. Switching
· Ultra Low Leakage Current
· UIS rated
· Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix


Specifications

SYMBOL PARAMETER VALUE UNIT
VDSS Drain - Source Voltage 1000 Volts
VGS Gate - Source Voltage ±20 Volts
ID1 Continuous Drain Current @ TC = 25 1 Amps
ID2 Continuous Drain Current @ TC = 100
 8 Amps

IDM1

 Pulsed Collector Current @ TC = 25 4 Amps
IAR Avalanche Current 1 Amps
EAR Repetitive Avalanche Energy TBD mJ
EAS Single Pulse Avalanche Energy TBD mJ
TJ, TSTG Operating and Storage: Junction Temperature Range -55 to 150



Description

The features of MSAFA1N100D:

` N-Channel enhancement mode high density MOSFET die
` Passivation: oxynitride, 4um
` Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
` Backside Metallization: Ti Ni (1 um) Ag (0.2 um) for soft solder attach




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