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MSAFX11P50A

Features: · High voltage p-channel power mosfet; complements MSAFX24N50A· Ultrafast body diode· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· R...

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SeekIC No. : 004427537 Detail

MSAFX11P50A: Features: · High voltage p-channel power mosfet; complements MSAFX24N50A· Ultrafast body diode· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Herm...

MSAFX11P50A Data Sheet

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Part Number:
MSAFX11P50A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· High voltage p-channel power mosfet; complements MSAFX24N50A
· Ultrafast body diode
· Rugged polysilicon gate cell structure
· Increased Unclamped Inductive Switching (UIS) capability
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C		 BVDSS 500 Volts
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M BVDGR 500 Volts
Continuous Gate-to-Source Voltage VGS +/-20 Volts
Transient Gate-to-Source Voltage VGSM +/-30 Volts
Continuous Drain Current Tj= 25°C
Tj=100°C		 ID25
ID100		 11
8		 Amps
Peak Drain Current, pulse width limited by TJmax IDM 44 Amps
Peak Drain Current IAR 11 Amps
Repetitive Avalanche Energy EAR 30 mJ
Single Pulse Avalanche Energy EAS tbd mJ
Voltage Rate of Change of the Recovery Diode
@ ISIDM, di/dt 100 A/s, VDD VDSS, TJ 150°C		 dv/dt 5.0 V/ns
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Continuous Source Current (Body Diode) IS 11 Amps
Pulse Source Current (Body Diode) ISM 44 Amps
Thermal Resistance, Junction to Case JC 0.25 °C/W



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