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MSAFX10N90A

Features: · Ultrafast body diode· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· Reverse polarity available upon requestSpecifications DESC...

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MSAFX10N90A: Features: · Ultrafast body diode· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically sealed, surface mount power package· Low package indu...

MSAFX10N90A Data Sheet

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Part Number:
MSAFX10N90A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Ultrafast body diode
· Rugged polysilicon gate cell structure
· Increased Unclamped Inductive Switching (UIS) capability
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C		 BVDSS 900 Volts
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 MW BVDGR 900 Volts
Continuous Gate-to-Source Voltage VGS +/-20 Volts
Transient Gate-to-Source Voltage VGSM +/-30 Volts
Continuous Drain Current Tj= 25°C
Tj=100°C		 ID25
ID100		 10
6		 Amps
Peak Drain Current, pulse width limited by TJmax IDM 40 Amps
Repetitive Avalanche Current IAR 10 Amps
Repetitive Avalanche Energy EAS 30 mJ
Single Pulse Avalanche Energy dv/dt tbd mJ
Voltage Rate of Change of the Recovery Diode
@ ISIDM, di/dt100 A/s, VDDVDSS, TJ150°C		 EAS 5.0 V/ns
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Continuous Source Current (Body Diode) IS 10 Amps
Pulse Source Current (Body Diode) ISM 40 Amps
Thermal Resistance, Junction to Case JC 0.25 °C/W



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