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MSAEX8P50A

Features: · High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A· Ultrafast body diode· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically sealed, surface mount power package· Low p...

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SeekIC No. : 004427527 Detail

MSAEX8P50A: Features: · High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A· Ultrafast body diode· Rugged polysilicon gate cell structure· Increased Unc...

MSAEX8P50A Data Sheet

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Part Number:
MSAEX8P50A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A
· Ultrafast body diode
· Rugged polysilicon gate cell structure
· Increased Unclamped Inductive Switching (UIS) capability
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C		 BVDSS 500 Volts
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M BVDGR 500 Volts
Continuous Gate-to-Source Voltage VGS +/-20 Volts
Transient Gate-to-Source Voltage VGSM +/-30 Volts
Continuous Drain Current Tj= 25°C
Tj=100°C		 ID25
ID100		 8
5		 Amps
Peak Drain Current, pulse width limited by TJmax IDM 32 Amps
Peak Drain Current IAR 8 Amps
Repetitive Avalanche Energy EAR 30 mJ
Single Pulse Avalanche Energy EAS tbd mJ
Voltage Rate of Change of the Recovery Diode
@ ISIDM, di/dt 100 A/s, VDD VDSS, TJ 150°C		 dv/dt 5.0 V/ns
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Continuous Source Current (Body Diode) IS 8 Amps
Pulse Source Current (Body Diode) ISM 32 Amps
Thermal Resistance, Junction to Case JC 0.35 °C/W



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