Features: · Ultrafast rectifier in parallel with the body diode (MSAE type only)· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· Reverse polarit...
MSAER12N50A: Features: · Ultrafast rectifier in parallel with the body diode (MSAE type only)· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically seale...
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Features: · Ultrafast rectifier in parallel with the body diode (MSAE type only)· Rugged polysilic...
Features: · Ultrafast rectifier in parallel with the body diode (MSAE type only)· Rugged polysilic...
Features: · High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; ...
DESCRIPTION | SYMBOL | MAX. | UNIT |
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ 25°C |
BVDSS | 500 | Volts |
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M | BVDGR | 500 | Volts |
Continuous Gate-to-Source Voltage | VGS | +/-20 | Volts |
Transient Gate-to-Source Voltage | VGSM | +/-30 | Volts |
Continuous Drain Current Tj= 25°C Tj=100°C |
ID25 ID100 |
12 8 |
Amps |
Peak Drain Current, pulse width limited by TJmax | IDM | 48 | Amps |
Peak Drain Current | IAR | 12 | Amps |
Repetitive Avalanche Energy | EAR | tbd | mJ |
Single Pulse Avalanche Energy | EAS | 8 | mJ |
Voltage Rate of Change of the Recovery Diode @ ISIDM, di/dt 100 A/s, VDD VDSS, TJ 150°C |
dv/dt | 3.5 | V/ns |
Power Dissipation | PD | 300 | Watts |
Junction Temperature Range | Tj | -55 to +150 | °C |
Storage Temperature Range | Tstg | -55 to +150 | °C |
Continuous Source Current (Body Diode) | IS | 12 | Amps |
Pulse Source Current (Body Diode) | ISM | 48 | Amps |
Thermal Resistance, Junction to Case | JC | 0.4 | °C/W |