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MSAEZ50N10A

Features: · Ultrafast rectifier in parallel with the body diode (MSAE type only)· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically sealed, surface mount power package· Low package inductance· Very low thermal resistance· Reverse polarit...

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SeekIC No. : 004427529 Detail

MSAEZ50N10A: Features: · Ultrafast rectifier in parallel with the body diode (MSAE type only)· Rugged polysilicon gate cell structure· Increased Unclamped Inductive Switching (UIS) capability· Hermetically seale...

MSAEZ50N10A Data Sheet

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Part Number:
MSAEZ50N10A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Ultrafast rectifier in parallel with the body diode (MSAE type only)
· Rugged polysilicon gate cell structure
· Increased Unclamped Inductive Switching (UIS) capability
· Hermetically sealed, surface mount power package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C		 BVDSS 100 Volts
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M BVDGR 100 Volts
Continuous Gate-to-Source Voltage VGS +/-20 Volts
Transient Gate-to-Source Voltage VGSM +/-30 Volts
Continuous Drain Current Tj= 25°C
Tj=100°C		 ID25
ID100		 50
40		 Amps
Peak Drain Current, pulse width limited by TJmax IDM 200 Amps
Peak Drain Current IAR 50 Amps
Repetitive Avalanche Energy EAR 18.5 mJ
Single Pulse Avalanche Energy EAS 400 mJ
Voltage Rate of Change of the Recovery Diode
@ ISIDM, di/dt 100 A/s, VDD VDSS, TJ 150°C		 dv/dt TBD V/ns
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Continuous Source Current (Body Diode) IS 50 Amps
Pulse Source Current (Body Diode) ISM 200 Amps
Thermal Resistance, Junction to Case JC 0.4 °C/W



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