MSA-2035

Features:

• Hermetic Ceramic Package
• 3 dB Bandwidth: DC to 1.1 GHz
• 17.3 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz


Specifications

Parameter	MSA- 2011	MSA- 2035	MSA-2085, -2086
Device Current	50 mA	60 mA	60 mA
Power Dissipation[2,3]	250 mW[3a]	325 mW[3b]	325 mW[3c]
RF Input Power	+13 dBm	+13 dBm	+13 dBm
Junction Temperature	150°C	200°C	150°C
Storage Temperature	-65 to 150°C	-65 to 200°C	-65 to 150°C
Thermal Resistance: jc	500°C/W	155°C/W	115°C/W

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_CASE = 25°C.
3 a. Derate at 2.0 mW/°C for T_C > 25°C.
   b. Derate at 6.5 mW/°C for T_C > 149°C.
   c. Derate at 8.7 mW/°C for T_C > 112°C.


Description

The MSA-2035 series are high performance silicon bipolar RFIC amplifiers designed to be cascadable in 50 W systems. The stability factor of K > 1 contributes to easy cascading in numerous narrow and broadband IF and RF commercial and industrial applications.

The MSA-2035 is fabricated using a 10 GHz f_T, 25 GHz FMAX, silicon bipolar RFIC process which utilizes nitride self-alignment, ion implantation, and gold metallization to achieve excellent uniformity, performance, and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Package options of MSA-2035 include the industry standard plastic surface mount SOT-143 package, the 100 mil surface mountable hermetic ceramic package, the 85 mil plastic microstripline package, and the 85 mil surface mountable plastic microstripline package.