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MSA-1105

Features: • High Dynamic Range Cascadable 50 or 75 Gain Block• 3Ê dB Bandwidth: 50Ê MHz to 1.3 GHz• 17.5 dBm Typical P1Ê dB at 0.5 GHz• 3.6 dB Typical Noise Figure at 0.5Ê GHz• Surface Mount Plastic Package• Tape-and-Reel Packaging Optio...

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MSA-1105: Features: • High Dynamic Range Cascadable 50 or 75 Gain Block• 3Ê dB Bandwidth: 50Ê MHz to 1.3 GHz• 17.5 dBm Typical P1Ê dB at 0.5 GHz• 3.6 dB Typical Nois...

MSA-1105 Data Sheet

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Part Number:
MSA-1105
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• High Dynamic Range Cascadable 50 or 75 Gain Block
• 3Ê dB Bandwidth: 50Ê MHz to 1.3 GHz
• 17.5 dBm Typical P1Ê dB at 0.5 GHz
• 3.6 dB Typical Noise Figure at 0.5Ê GHz
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available[1]




Specifications

Parameter Absolute Maximum[1]
Device Current 80 mA
Power Dissipation[2,3] 550 mW
RF Input Power +13 dBm
Junction Temperature 150
Storage Temperature 65 to 150

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25.
3. Derate at 8 mW/ for TC > 124.
4. See MEASUREMENTS section "Thermal Resistance" for more information.




Description

The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package.

This MSA-1105  is designed for high dynamic range in either 50 or 75 systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems.

The MSA-1105 is fabricated using HP's 10 GHz fT, 25Ê GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.






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