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MSA-1100

Features: • High Dynamic Range Cascadable 50 or 75 Gain Block• 3 dB Bandwidth: 50 MHz to 1.6 GHz• 17.5 dBm Typical P1dB at 0.5 GHz• 12 dB Typical 50 Gain at 0.5 GHz• 3.5 dB Typical Noise Figure at 0.5 GHzSpecifications Parameter Absolute Maximum[1] Device ...

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MSA-1100: Features: • High Dynamic Range Cascadable 50 or 75 Gain Block• 3 dB Bandwidth: 50 MHz to 1.6 GHz• 17.5 dBm Typical P1dB at 0.5 GHz• 12 dB Typical 50 Gain at 0.5 GHz•...

MSA-1100 Data Sheet

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Part Number:
MSA-1100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• High Dynamic Range Cascadable 50 or 75 Gain Block
• 3 dB Bandwidth: 50 MHz to 1.6 GHz
• 17.5 dBm Typical P1dB at 0.5 GHz
• 12 dB Typical 50 Gain at 0.5 GHz
• 3.5 dB Typical Noise Figure at 0.5 GHz


Specifications

Parameter Absolute Maximum[1]
Device Current 100 mA
Power Dissipation[2,3] 650mW
RF Input Power +13 dBm
Junction Temperature 200
Storage Temperature 65 to 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMountingÊ Surface (TMS) = 25.
3. Derate at 17.5 mW/ for TMounting Surface > 163.
4. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods.


Description

The MSA-1100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for high dynamic range in either 50 or 75 systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems.

The MSA-1100 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The MSA-1100 recommended assembly procedure is gold-eutectic die attach at 400 and either wedge or ball bonding using 0.7 mil gold wire.
This chip MSA-1100 is intended to be used with an external blocking capacitor completing the shunt feedback path (closed loop). Data sheet characterization is given for a 200 pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1]




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