Features: • High Output Power: +27 dBm Typical P1dB at 1.0 GHz• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz• 8.5 dB Typical Gain at 1.0 GHz• Hermetic, Metal/Beryllia Stripline Package• Impedance Matched to 25 for Push-Pull ConfigurationsSpecifications Paramete...
MSA-1023: Features: • High Output Power: +27 dBm Typical P1dB at 1.0 GHz• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz• 8.5 dB Typical Gain at 1.0 GHz• Hermetic, Metal/Beryllia Stripl...
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Parameter | Absolute Maximum[1] |
Device Current | 425 mA |
Power Dissipation[2,3] | 7.0W |
RF Input Power | +25 dBm |
Junction Temperature | 200 |
Storage Temperature | 65 to 200 |
The MSA-1023 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO flange package for good thermal characteristics.
This MMIC is designed for use in a push-pull configuration in a 25 system. The MSA-1023 can also be used as a single-ended amplifier in a 50 system with slightly reduced performance. Typical applications include narrow and broadband RF amplifiers in industrial and military systems.
The MSA-1023 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.