MSA-1023

Features: • High Output Power: +27 dBm Typical P1dB at 1.0 GHz• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz• 8.5 dB Typical Gain at 1.0 GHz• Hermetic, Metal/Beryllia Stripline Package• Impedance Matched to 25 for Push-Pull ConfigurationsSpecifications Paramete...

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SeekIC No. : 004427501 Detail

MSA-1023: Features: • High Output Power: +27 dBm Typical P1dB at 1.0 GHz• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz• 8.5 dB Typical Gain at 1.0 GHz• Hermetic, Metal/Beryllia Stripl...

floor Price/Ceiling Price

Part Number:
MSA-1023
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• High Output Power: +27 dBm Typical P1dB at 1.0 GHz
• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz
• 8.5 dB Typical Gain at 1.0 GHz
• Hermetic, Metal/Beryllia Stripline Package
• Impedance Matched to 25 for Push-Pull Configurations



Specifications

Parameter Absolute Maximum[1]
Device Current 425 mA
Power Dissipation[2,3] 7.0W
RF Input Power +25 dBm
Junction Temperature 200
Storage Temperature 65 to 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25.
3. Derate at 66.7 mW/ for TC > 95.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.



Description

The MSA-1023 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO flange package for good thermal characteristics.

This MMIC is designed for use in a push-pull configuration in a 25 system. The MSA-1023 can also be used as a single-ended amplifier in a 50 system with slightly reduced performance. Typical applications include narrow and broadband RF amplifiers in industrial and military systems.

The MSA-1023 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.




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