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MSA-1000

Features: • High Output Power: +27 dBm Typical P1dB at 1.0 GHz• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz• Impedance Matched to 25 for Push-Pull ConfigurationsSpecifications Parameter Absolute Maximum[1] Device Current 425 mA ...

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MSA-1000: Features: • High Output Power: +27 dBm Typical P1dB at 1.0 GHz• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz• Impedance Matched to 25 for P...

MSA-1000 Data Sheet

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Part Number:
MSA-1000
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• High Output Power: +27 dBm Typical P1dB at 1.0 GHz
• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0  GHz
• Impedance Matched to 25 for Push-Pull Configurations


Specifications

Parameter Absolute Maximum[1]
Device Current 425 mA
Power Dissipation[2,3] 7.0W
RF Input Power +25 dBm
Junction Temperature 200
Storage Temperature 65 to 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25.
3. Derate at 100 mW/ for TMounting Surface > 130.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods.


Description

The MSA-1000 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use in a push-pull configuration in a 25 system. The MSA-1000 can also be used as single-ended amplifier in a 50 system with slightly reduced performance. Typical applications include narrow and broadband RF amplifiers in industrial and military systems.

The MSA-1000 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The MSA-1000 recommended assembly procedure is gold-eutectic die attach at 400 and either wedge or ball bonding using 0.7 mil gold wire.

This MSA-1000 chip is intended to be used with an external blocking capacitor completing the shunt feedback path (closed loop). Data sheet characterization is given for a 80 pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1]




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