Features: • Broadband, Minimum Ripple Cascadable 50 Gain Block• 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz• 3 dB Bandwidth: 0.1 to 6.0 GHz• Low VSWR: 1.5:1 from 0.1 to 4.0 GHz• 11.5 dBm Typical P1dB at 1.0 GHz• Hermetic Gold-ceramic Microstrip Pack...
MSA-0910: Features: • Broadband, Minimum Ripple Cascadable 50 Gain Block• 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz• 3 dB Bandwidth: 0.1 to 6.0 GHz• Low VSWR: 1.5:1 from...
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Parameter | Absolute Maximum[1] |
Device Current | 80 mA |
Power Dissipation[2,3] | 750mW |
RF Input Power | +13 dBm |
Junction Temperature | 200 |
Storage Temperature | 65 to 200 |
The MSA-0910 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for very wide bandwidth industrial and military applications that require flat gain and low VSWR.
The MSA-0910 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.