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MSA-0900

Features: • Broadband, Minimum Ripple Cascadable 50 Gain Block• 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz• 3 dB Bandwidth: 0.1 to 6.0 GHz• Low VSWR: 1.5:1 from 0.1 to 4.0 GHz• 11.5 dBm Typical P1dB at 1.0 GHzSpecifications Parameter Absolute Maxim...

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MSA-0900: Features: • Broadband, Minimum Ripple Cascadable 50 Gain Block• 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz• 3 dB Bandwidth: 0.1 to 6.0 GHz• Low VSWR: 1.5:1 from...

MSA-0900 Data Sheet

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Part Number:
MSA-0900
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Broadband, Minimum Ripple Cascadable 50 Gain Block
• 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz
• 3 dB Bandwidth: 0.1 to 6.0 GHz
• Low VSWR: 1.5:1 from 0.1 to 4.0 GHz
• 11.5 dBm Typical P1dB at 1.0 GHz


Specifications

Parameter Absolute Maximum[1]
Device Current 80 mA
Power Dissipation[2,3] 750mW
RF Input Power +13 dBm
Junction Temperature 200
Storage Temperature 65 to 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25.
3. Derate at 14 mW/ for TMounting Surface > 148.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods.


Description

The MSA-0900 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for very wide bandwidth industrial and military applications that require flat gain and low VSWR.

The MSA-0900 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The MSA-0900 recommended assembly procedure is gold-eutectic die attach at 400 and either wedge or ball bonding using 0.7 mil gold wire.
This chip is intended to be used with an external blocking capacitor completing the shunt feedback path (closed loop). Data sheet characterization is given for a 45 pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1]




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