MSA-0885

Features: • Usable Gain to 6.0GHz• High Gain: 32.5 dB Typical at 0.1GHz 22.5 dB Typical at 1.0GHz• Low Noise Figure: 3.3dB Typical at 1.0GHz• Low Cost Plastic PackageSpecifications Parameter Absolute Maximum[1] Device Current 65mA Power Dissipation[2,3] 500 mW...

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SeekIC No. : 004427494 Detail

MSA-0885: Features: • Usable Gain to 6.0GHz• High Gain: 32.5 dB Typical at 0.1GHz 22.5 dB Typical at 1.0GHz• Low Noise Figure: 3.3dB Typical at 1.0GHz• Low Cost Plastic PackageSpecific...

floor Price/Ceiling Price

Part Number:
MSA-0885
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Usable Gain to 6.0GHz
• High Gain: 32.5 dB Typical at 0.1GHz 22.5 dB Typical at 1.0GHz
• Low Noise Figure: 3.3dB Typical at 1.0GHz
• Low Cost Plastic Package



Specifications

Parameter Absolute Maximum[1]
Device Current 65mA
Power Dissipation[2,3] 500 mW
RF Input Power +13 dBm
Junction Temperature 150
Storage Temperature 65 to150

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25.
3. Derate at 7.7 mW/ for TC > 85.
4. See MEASUREMENTS section "Thermal Resistance" for more information.



Description

The MSA-0885 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 gain block above 0.5GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

The MSA-0885 is fabricated using HP's 10 GHz fT, 25GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.




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