Features: • Usable Gain to 6.0GHz• High Gain: 32.5 dB Typical at 0.1GHz 22.5 dB Typical at 1.0GHz• Low Noise Figure: 3.3dB Typical at 1.0GHz• Low Cost Plastic PackageSpecifications Parameter Absolute Maximum[1] Device Current 65mA Power Dissipation[2,3] 500 mW...
MSA-0885: Features: • Usable Gain to 6.0GHz• High Gain: 32.5 dB Typical at 0.1GHz 22.5 dB Typical at 1.0GHz• Low Noise Figure: 3.3dB Typical at 1.0GHz• Low Cost Plastic PackageSpecific...
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Parameter | Absolute Maximum[1] |
Device Current | 65mA |
Power Dissipation[2,3] | 500 mW |
RF Input Power | +13 dBm |
Junction Temperature | 150 |
Storage Temperature | 65 to150 |
The MSA-0885 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 gain block above 0.5GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
The MSA-0885 is fabricated using HP's 10 GHz fT, 25GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.