Features: • Usable Gain to 6.0Ê GHz • High Gain:32.5 dB Typical at 0.1 GHz23.0 dB Typical at 1.0 GHz• Low Noise Figure:3.0 dB Typical at 1.0Ê GHz• Cost Effective CeramicMicrostrip PackageSpecifications Parameter Absolute Maximum[1] Device Current 80 mA...
MSA-0836: Features: • Usable Gain to 6.0Ê GHz • High Gain:32.5 dB Typical at 0.1 GHz23.0 dB Typical at 1.0 GHz• Low Noise Figure:3.0 dB Typical at 1.0Ê GHz• Cost Effective ...
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Parameter | Absolute Maximum[1] |
Device Current | 80 mA |
Power Dissipation[2,3] | 750 mW |
RF Input Power |
+13 dBm |
Junction Temperature | 200 |
Storage Temperature[4] | 65 to 200 |
The MSA-0836 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 W gain block above 0.5 GHz and can be used as a high gain transistor below this frequency.
MSA-0836's Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
The MSA-0836 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Available in cut lead version (packageÊ 36) as MSA-0836.