Features: • Usable Gain to 6.0Ê GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.0 dB Typical at 1.0 GHz• Low Noise Figure: 3.0 dB Typical at 1.0Ê GHz• Cost Effective Ceramic Microstrip PackageSpecifications Parameter Absolute Maximum[1] Device Current 8...
MSA-0835: Features: • Usable Gain to 6.0Ê GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.0 dB Typical at 1.0 GHz• Low Noise Figure: 3.0 dB Typical at 1.0Ê GHz• Cost Effecti...
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Parameter | Absolute Maximum[1] |
Device Current | 80 mA |
Power Dissipation[2,3] | 750 mW |
RF Input Power |
+13 dBm |
Junction Temperature | 200 |
Storage Temperature[4] | 65 to 200 |
The MSA-0835 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 W gain block above 0.5 GHz and can be used as a high gain transistor below this frequency.
MSA-0835's Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
The MSA-0835 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
MSA-0835 is available in cut lead version (packageÊ 36) as MSA-0836.