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MSA-0800

Features: • Usable Gain to 6.0GHz• High Gain: 32.5 dB Typical at 0.1GHz 23.5 dB Typical at 1.0GHz• Low Noise Figure: 3.0dB Typical at 1.0GHzSpecifications Parameter Absolute Maximum[1] Device Current 80 mA Power Dissipation[2,3] 750 mW RF Input Power +13 dBm ...

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MSA-0800: Features: • Usable Gain to 6.0GHz• High Gain: 32.5 dB Typical at 0.1GHz 23.5 dB Typical at 1.0GHz• Low Noise Figure: 3.0dB Typical at 1.0GHzSpecifications Parameter Absolute ...

MSA-0800 Data Sheet

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Part Number:
MSA-0800
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Usable Gain to 6.0GHz
• High Gain: 32.5 dB Typical at 0.1GHz 23.5 dB Typical at 1.0GHz
• Low Noise Figure: 3.0dB Typical at 1.0GHz


Specifications

Parameter Absolute Maximum[1]
Device Current 80 mA
Power Dissipation[2,3] 750 mW
RF Input Power +13 dBm
Junction Temperature 200
Storage Temperature 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25.
3. Derate at 14.3 mW/ for TMounting Surface > 148.
4. The small spot size of this technique results in a higher, though more
accurate determination of jc than do alternate methods. See MEASURE


Description

The MSA-0800 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 gain block above 0.5GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.

The MSA-0800 is fabricated using HP's 10 GHz fT, 25GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The MSA-0800 recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, "Chip Use".




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