MSA-0785

Features: • Cascadable 50 Gain Block• Low Operating Voltage: 4.0 V Typical Vd• 3 dB Bandwidth: DC to 2.0 GHz• 12.5 dB Typical Gain at 1.0ÊGHz• Unconditionally Stable (k>1)• Low Cost Plastic PackageSpecifications Parameter Absolute Maximum[1] D...

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MSA-0785 Picture
SeekIC No. : 004427489 Detail

MSA-0785: Features: • Cascadable 50 Gain Block• Low Operating Voltage: 4.0 V Typical Vd• 3 dB Bandwidth: DC to 2.0 GHz• 12.5 dB Typical Gain at 1.0ÊGHz• Unconditionally St...

floor Price/Ceiling Price

Part Number:
MSA-0785
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Cascadable 50 Gain Block
• Low Operating Voltage: 4.0 V Typical Vd
• 3 dB Bandwidth: DC to 2.0 GHz
• 12.5 dB Typical Gain at 1.0ÊGHz
• Unconditionally Stable (k>1)
• Low Cost Plastic Package



Specifications

Parameter Absolute Maximum[1]
Device Current 60 mA
Power Dissipation[2,3] 275 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature 65 to 150°C

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 9.1 mW/°C for TC > 120°C.
4. See MEASUREMENTS section "Thermal Resistance" for more information



Description

The MSA-0785 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

The MSA-0785 is fabricated using HP's 10 GHz fT, 25ÊGHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.




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