Features: • Cascadable 50 W Gain Block• Low Operating Voltage: 4.0 V Typical Vd• 3 dB Bandwidth: DC to 2.4 GHz• 13.0 dB Typical Gain at 1.0 GHz• Unconditionally Stable (k>1)• Cost Effective Ceramic Microstrip PackageSpecifications Parameter Absolute Max...
MSA-0735: Features: • Cascadable 50 W Gain Block• Low Operating Voltage: 4.0 V Typical Vd• 3 dB Bandwidth: DC to 2.4 GHz• 13.0 dB Typical Gain at 1.0 GHz• Unconditionally Stable ...
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Parameter | Absolute Maximum[1] |
Device Current | 60 mA |
Power Dissipation[2,3] | 275 mW |
RF Input Power |
+13 dBm |
Junction Temperature | 200 |
Storage Temperature | 65 to 200 |
The MSA-0735 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-0735 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.