MSA-0735

Features: • Cascadable 50 W Gain Block• Low Operating Voltage: 4.0 V Typical Vd• 3 dB Bandwidth: DC to 2.4 GHz• 13.0 dB Typical Gain at 1.0 GHz• Unconditionally Stable (k>1)• Cost Effective Ceramic Microstrip PackageSpecifications Parameter Absolute Max...

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SeekIC No. : 004427487 Detail

MSA-0735: Features: • Cascadable 50 W Gain Block• Low Operating Voltage: 4.0 V Typical Vd• 3 dB Bandwidth: DC to 2.4 GHz• 13.0 dB Typical Gain at 1.0 GHz• Unconditionally Stable ...

floor Price/Ceiling Price

Part Number:
MSA-0735
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Cascadable 50 W Gain Block
• Low Operating Voltage: 4.0 V Typical Vd
• 3 dB Bandwidth: DC to 2.4 GHz
• 13.0 dB Typical Gain at 1.0 GHz
• Unconditionally Stable (k>1)
• Cost Effective Ceramic Microstrip Package



Specifications

Parameter Absolute Maximum[1]
Device Current 60 mA
Power Dissipation[2,3] 275 mW
RF Input Power
+13 dBm
Junction Temperature 200
Storage Temperature 65 to 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25.
3. Derate at 6.5 mW/ for TC > 157.
4. Storage above +150 may tarnish the leads of this package making it difficult to solder into a circuit.
5. Ths small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.



Description

The MSA-0735 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.

The MSA-0735 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.




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