MSA-0685

Features: • Cascadable 50 W Gain Block• Low Operating Voltage: 3.5 V Typical Vd• 3 dB Bandwidth: DC to 0.8 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Low Noise Figure: 3.0 dB Typical at 0.5 GHz• Low Cost Plastic PackageSpecifications Parameter Absolute Ma...

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MSA-0685 Picture
SeekIC No. : 004427483 Detail

MSA-0685: Features: • Cascadable 50 W Gain Block• Low Operating Voltage: 3.5 V Typical Vd• 3 dB Bandwidth: DC to 0.8 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Low Noise Figure:...

floor Price/Ceiling Price

Part Number:
MSA-0685
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Cascadable 50 W Gain Block
• Low Operating Voltage:
   3.5 V Typical Vd
• 3 dB Bandwidth:
   DC to 0.8 GHz
• High Gain:
   18.5 dB Typical at 0.5 GHz
• Low Noise Figure:
   3.0 dB Typical at 0.5 GHz
• Low Cost Plastic Package



Specifications

Parameter Absolute Maximum[1]
Device Current 50 mA
Power Dissipation[2,3] 200 mW
RF Input Power
+13 dBm
Junction Temperature 150
Storage Temperature 65 to 150

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25.
3. Derate at 9.1 mW/ for TC > 128.
4. See MEASUREMENTS section "Thermal Resistance" for more information.



Description

The MSA-0685 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

The MSA-0685 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.




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