Features: • Cascadable 50 Gain Block• Low Operating Voltage (3.5 V typical Vd)• 3 dB Bandwidth: DC to 1.0 GHz• High Gain: 19.5 dB Typical at 0.5 GHz• Low Noise Figure: 2.8 dB Typical at 0.5 GHzSpecifications Parameter Absolute Maximum[1] Device Current 50 m...
MSA-0600: Features: • Cascadable 50 Gain Block• Low Operating Voltage (3.5 V typical Vd)• 3 dB Bandwidth: DC to 1.0 GHz• High Gain: 19.5 dB Typical at 0.5 GHz• Low Noise Figure:...
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Parameter | Absolute Maximum[1] |
Device Current | 50 mA |
Power Dissipation[2,3] | 200mW |
RF Input Power | +13 dBm |
Junction Temperature | 200 |
Storage Temperature | 65 to 200 |
The MSA-0600 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.
The MSA-0600 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
The MSA-0600 recommended assembly procedure is gold-eutectic die attach at 400 and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, "Chip Use".