Features: • Cascadable 50 Gain Block• High Output Power: +23 dBm Typical P1 dB at 1.0 GHz• Low Distortion: 33 dBm Typical IP 3 at 1.0 GHz• 8.5 dB Typical Gain at 1.0 GHzSpecifications Parameter Absolute Maximum[1] Device Current 225 mA Power Dissipation[2,3] ...
MSA-0500: Features: • Cascadable 50 Gain Block• High Output Power: +23 dBm Typical P1 dB at 1.0 GHz• Low Distortion: 33 dBm Typical IP 3 at 1.0 GHz• 8.5 dB Typical Gain at 1.0 GHzSpec...
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Parameter | Absolute Maximum[1] |
Device Current | 225 mA |
Power Dissipation[2,3] | 3.0W |
RF Input Power | +25 dBm |
Junction Temperature | 200 |
Storage Temperature | 65 to 200 |
The MSA-0500 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military systems.
The MSA-0500 is fabricated using HP's 10 GHz fT, 25Ê GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
The MSA-0500recommended assembly procedure is gold-eutectic die attach at 400 and either wedge or ball bonding using 0.7 mil gold wire.
This chip MSA-0500 is intended to be used with an external blocking capacitor completing the shunt feedback path (closed loop). Data sheet characterization is given for a 45 pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1]