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MSA-0485

Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 3.6 GHz• 8.0 dB Typical Gain at 1.0 GHz• 12.5 dBm Typical P1 dB at 1.0 GHz• Unconditionally Stable (k>1)• Low Cost Plastic PackageSpecifications Parameter Absolute Maximum[1] Device Curren...

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SeekIC No. : 004427473 Detail

MSA-0485: Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 3.6 GHz• 8.0 dB Typical Gain at 1.0 GHz• 12.5 dBm Typical P1 dB at 1.0 GHz• Unconditionally Stable (k>1...

MSA-0485 Data Sheet

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Part Number:
MSA-0485
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Cascadable 50 W Gain Block
• 3 dB Bandwidth: DC to 3.6 GHz
• 8.0 dB Typical Gain at 1.0 GHz
• 12.5 dBm Typical P1 dB at 1.0 GHz
• Unconditionally Stable (k>1)
• Low Cost Plastic Package


Specifications

Parameter Absolute Maximum[1]
Device Current 85 mA
Power Dissipation[2,3] 500 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature 65 to 150°C

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 11.1 mW/°C for TC > 105°C.
4. See MEASUREMENTS section "Thermal Resistance" for more information.


Description

The MSA-0485 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost  plastic package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

The MSA-0485 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.




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