Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 3.8 GHz• 12.5 dBm Typical P1 dB at 1.0 GHz• 8.5 dB Typical Gain at 1.0 GHz• Unconditionally Stable (k>1)• Cost Effective Ceramic Microstrip PackageSpecifications Parameter Absolute Maximum[1]...
MSA-0436: Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 3.8 GHz• 12.5 dBm Typical P1 dB at 1.0 GHz• 8.5 dB Typical Gain at 1.0 GHz• Unconditionally Stable (k>1...
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Parameter | Absolute Maximum[1] |
Device Current | 100 mA |
Power Dissipation[2,3] | 650 mW |
RF Input Power |
+13 dBm |
Junction Temperature | 200 |
Storage Temperature[4] | 65 to 200 |
The MSA-0436 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-0436 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Available in cut lead version (package 36) as MSA-0436.