Features: • Cascadable 50 Gain Block• 3 dB Bandwidth: DC to 2.7 GHz• 12.0 dB Typical Gain at 1.0ÊGHz• 10.0 dBm Typical P1dB at 1.0ÊGHz• Unconditionally Stable (k>1)• Cost Effective Ceramic Microstrip PackageSpecifications Parameter Absolute...
MSA-0335: Features: • Cascadable 50 Gain Block• 3 dB Bandwidth: DC to 2.7 GHz• 12.0 dB Typical Gain at 1.0ÊGHz• 10.0 dBm Typical P1dB at 1.0ÊGHz• Unconditionally Sta...
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Parameter | Absolute Maximum[1] |
Device Current | 80 mA |
Power Dissipation[2,3] | 425 mW |
RF Input Power | +13 dBm |
Junction Temperature | 200°C |
Storage Temperature[4] | 65 to 200°C |
The MSA-0335 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-0335 is fabricated using HP's 10 GHz fT, 25ÊGHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
MSA-0335 is Available in cut lead version (package 36) as MSA-0336.