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MSA-0200

Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 2.8 GHz• 12.0 dB Typical Gain at 1.0 GHz• Unconditionally Stable (k>1)Specifications Parameter Absolute Maximum[1] Device Current 60 mA Power Dissipation[2,3] 325 mW RF Input Power +13 dBm ...

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MSA-0200: Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 2.8 GHz• 12.0 dB Typical Gain at 1.0 GHz• Unconditionally Stable (k>1)Specifications Parameter Absolute...

MSA-0200 Data Sheet

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Part Number:
MSA-0200
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Cascadable 50 W Gain Block
• 3 dB Bandwidth: DC to 2.8 GHz
• 12.0 dB Typical Gain at 1.0 GHz
• Unconditionally Stable (k>1)


Specifications

Parameter Absolute Maximum[1]
Device Current 60 mA
Power Dissipation[2,3] 325 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature 65 to 200°C

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 28.6 mW/°C for TMS > 189°C.
4. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.


Description

The MSA-0200 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.

The MSA-0200 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The MSA-0200 recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, "Chip Use".




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